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[期刊论文]

Prevalence of Burnout in Intern Doctors on a Compulsory Rotational Internship in the Aftermath of the 2nd and 3rd Wave of COVID-19, Conducted in a Tertiary Hospital in Kolkata, India for the Academic Year 2021–2022

作者:Sagarika Choudhury

来源:BJPsych Open. 2022 ;8(S1):S119-S119.doi:10.1192/bjo.2022.355

出版社:Royal College of Psychiatrists

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[期刊论文]

Prevalence of Burnout in Intern Doctors on a Compulsory Rotational Internship in the Aftermath of the 2nd and 3rd Wave of COVID-19, Conducted in a Tertiary Hospital in Kolkata, India for the Academic Year 2021–2022

作者:Sagarika Choudhury

来源:BJPsych Open. 2022 ;8(S1):S119-S119.doi:10.1192/bjo.2022.355

出版社:Cambridge University Press

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[期刊论文]

Design and simulation of P-TFET for improved ION/IOFF ratio and subthreshold slope using strained Si1−xGex channel heterojunction

作者:Sagarika Choudhury ;Neeraj Kumar Niranjan ;Krishna Lal Baishnab

来源:Microsystem Technologies. 2020 ;26(6):1777-1782.doi:10.1007/s00542-019-04722-7

出版社:Springer Nature

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[期刊论文]

A novel approach of power allocation for secondary users in cognitive radio networks

作者:Amrit Mukherjee ;Sagarika Choudhury ;Pratik Goswami

来源:Computers & Electrical Engineering. 2019 ;75:301-308.doi:10.1016/j.compeleceng.2018.03.006

出版社:Elsevier BV

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[期刊论文]

A double-gate heteromaterial tunnel FET optimized using an evolutionary algorithm

作者:Sagarika Choudhury ;Brinda Bhowmick ;Krishna Lal Baishnab

来源:Journal of Computational Electronics. 2020 ;19(1):277-282.doi:10.1007/s10825-019-01426-z

出版社:Springer Nature

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[期刊论文]

A surface potential-model based parameter extraction of Si–Ge-pocket n-TFET

作者:Sagarika Choudhury ;Krishna Lal Baishnab ;Koushik Guha

来源:Microsystem Technologies. 2021 ;27(10).doi:10.1007/s00542-020-05186-w

出版社:Springer Nature

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[期刊论文]

Design and optimization of asymmetrical TFET using meta-heuristic algorithms

作者:Sagarika Choudhury ;Krishna Lal Baishnab ;Brinda Bhowmick

来源:Microsystem Technologies. 2021 ;27(9).doi:10.1007/s00542-020-05140-w

出版社:Springer Nature

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[期刊论文]

Effect of metal work function of asymmetric dielectric tunnel FET on its performance

作者:Neeraj Kumar Niranjan ;Sagarika Choudhury ;Madhuchhanda Choudhury

来源:Microsystem Technologies. 2021 ;27(10).doi:10.1007/s00542-020-05160-6

出版社:Springer Nature

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