1[期刊论文]

Emerging device: FINFET, tunnel FET and their applications

作者：Brinda Bhowmick

来源：CSI Transactions on ICT. 2019 ;7(3):221-225.doi:10.1007/s40012-019-00240-z

出版社：Springer Nature

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2[期刊论文]

Reduction of the kink effect in a SELBOX tunnel FET and its RF/analog performance

作者：Puja Ghosh ;Brinda Bhowmick

来源：Journal of Computational Electronics. 2019 ;18(4):1182-1191.doi:10.1007/s10825-019-01382-8

出版社：Springer Nature

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3[期刊论文]

2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET

作者：Prashanth Kumar ;Brinda Bhowmick

来源：Journal of Computational Electronics. 2017 ;16(3):658-665.doi:10.1007/s10825-017-1011-x

出版社：Springer Nature

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4[期刊论文]

2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET

作者：Prashanth Kumar ;Brinda Bhowmick

来源：Superlattices and Microstructures. 2017 ;109:805-814.doi:10.1016/j.spmi.2017.06.001

出版社：Elsevier BV

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5[期刊论文]

Interfacial charge analysis and temperature sensitivity of germanium source vertical tunnel FET with delta-doped layer

作者：K. Vanlalawmpuia ;Brinda Bhowmick

来源：Microelectronics Reliability. 2022 ;131:114512.doi:10.1016/j.microrel.2022.114512

出版社：Elsevier BV

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6[期刊论文]

Investigation of a dual gate pocket-doped drain engineered tunnel FET and its reliability issues

作者：Sirisha Meriga ;Brinda Bhowmick

来源：Applied Physics A. 2023 ;129(2):1-11.doi:10.1007/s00339-023-06394-7

出版社：Springer Nature

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7[期刊论文]

An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET and Analysis of effect of Traps and Oxide charges on Fringing Capacitance

作者：Brinda Bhowmick ;Srimanta Baishya

来源：International Journal of VLSI Design & Communication Systems. 2012 ;3(1).

出版社：Academy & Industry Research Collaboration Center (AIRCC)

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8[期刊论文]

Optimisation of electrical parameters in Fe DS-SBTFET and its application as a digital inverter

作者：Brinda Bhowmick ;Puja Ghosh

来源：International Journal of Electronics. 2019 ;106(11):1617-1631.doi:10.1080/00207217.2019.1600744

出版社：Taylor & Francis Group

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9[期刊论文]

A temperature‐dependent surface potential‐based algorithm for extraction of threshold voltage in homojunction TFETs

作者：Rupam Goswami ;Brinda Bhowmick

来源：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 2018 ;31(3).doi:10.1002/jnm.2304

出版社：John Wiley & Sons, Ltd.

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10[期刊论文]

A physics‐based threshold voltage model for hetero‐dielectric dual material gate Schottky barrier MOSFET

作者：Prashanth Kumar ;Brinda Bhowmick

来源：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 2018 ;31(5).doi:10.1002/jnm.2320

出版社：John Wiley & Sons, Ltd.

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