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The performance of TFET is limited by low ON state tunnel current. This paper introduces a novel p-channel tunnel field effect transistor (TFET) which incorporates a hetero-structure channel layer made of Si/intrinsic—SiGe. Also, tensile strained Si1− x Ge x p-type channel is used which enhances the device characteristics, where x is the Ge-mole fraction. The proposed structure exhibits a very small subthreshold swing and a high ON–OFF current ratio. The device characteristics are improved on the basis of theoretical principles and simulation results. The structure is improvised to achieve higher values for ON-current as compared to previously reported structures in literature. The average value of subthreshold swing and ION-current are found to be 59 mV/dec and 10−5 A/µm.
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