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The composition, structural, electrical, and optical properties of
as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been
studied. The ultra-thin SnS films were prepared on glass substrates by
thermal resistive evaporation technique. All the SnS films contained
nanocrystallites and exhibited p-type conductivity with a low
Hall-mobility, <50cm^2/Vs. All these films are highly tin rich in nature
and exhibited orthorhombic crystal structure. As compared to other films,
the SnS films annealed at 300^oC showed a low electrical resistivity of
~36@Wcm with an optical band gap of ~1.98eV. The observed electrical and
optical properties of all the films are discussed based on their
composition and structural parameters. These nanocrystalline ultra-thin SnS
films could be expected as a buffer layer for the development of tandem
solar cell devices due to their low-resistivity and high absorbability with
an optimum band gap.
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