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Al-doped ZnO (ZnO:Al) films were deposited on glass and Si substrates
using radio frequency reactive magnetron sputtering technique. Crystal
structure, surface morphology and optical properties of ZnO:Al films on the
different substrates were studied. Subsequently, effects of sputtering
parameters, such as the substrate temperature, annealing temperature,
sputtering power and ratio of oxygen to argon gas flow, on
photoluminescence (PL) properties of ZnO:Al films on Si substrates were
systematically investigated. The results indicated that high substrate
temperature will create more defects resulting in the Auger effect and then
the quenching of the light emission in ZnO films. However, annealing
treatment and appropriate sputtering power can improve light emission
efficiencies. ZnO:Al thin films grown on Si substrates are very important
for improving the efficiencies of optoelectronic devices fabricated
utilizing ZnO/Si heterostructures.
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