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In this paper, three typical kinds of Te inclusions were observed in
indium-doped CdZnTe (CZT:In) crystals. Characterizations revealed that the
size of these Te inclusions was 10-30@mm. They are homogeneously
distributed in CZT:In crystals without defects such as twin crystal and
sub-grain boundary, whereas they are inhomogeneously distributed in CZT
crystals without these defects. Moreover, the mechanism of morphology
evolution of Te inclusions was proposed according to annealing experiments.
Tetrahedron Te inclusions preferentially formed during growth, to which
hexagonal Te inclusions transformed. Near-hexagonal Te inclusions were the
intermediate shape. All kinds of Te inclusions could be eliminated by
post-growth annealing under Cd/Zn atmosphere.
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