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Si/Al"2O"3/Zn/ZnO multilayer films are prepared by magnetron sputtering. The conjunct effect of Al"2O"3 insulator interlayer and Zn buffer layer on the photoluminescence (PL) properties of ZnO films are investigated in detail. PL spectrum of Si/Zn/ZnO multilayer film (0min) shows an evident violet peak and weak blue-green emission. As the deposition time of Al"2O"3 insulator interlayer is increased to 5min, the violet peak disappears and there occurs both new peaks at 421 and 433nm, respectively. Interestingly, as the deposition time of Al"2O"3 insulator interlayer is further increased to 15min, a strong violet peak at 413nm is observed. Also, all the peak intensity attain maximum. A model considering Ohmic contact formed between Zn and ZnO and Al"2O"3 insulator interlayer effect is proposed to interpret the change of the PL spectra.
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