[期刊论文]


Organic semiconductor memory devices based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties

作   者:
Xinjun Xu;Lidong Li;Bo Liu;Yingping Zou;

出版年:2011

页    码:063303 - 063303
出版社:AIP Publishing


摘   要:

Polyfluorene and its derivatives are good candidates to fabricate single-component polymer memories. However, the reported polyfluorenes for use in memories all have a big band gap and exhibit an absorption peak near the ultraviolet region. We report here organic memories based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties to improve on/off ratios. Also, possible factors which may influence the performance of polymermemory devices are investigated and feasible approaches for improving device performance are provided.



关键字:

Polymers ; Silver ; Magnetic storage devices ; Conducting polymers ; Electrodes


所属期刊
Applied Physics Letters
ISSN: 0003-6951
来自:AIP Publishing